History
| 2000 | Feb Feb Apr May May Jun Dec Dec |
Announces development of 266MHz, 64Mb SDRAM for graphics Mass Production of 288Mb Rambus™ DRAM Announces development of 256 color LCD drive IC Mass Production of 256Mb Flash memory Announces development of 512Mb DRAM Mass production of Flash MCU Achieves milestone of 10B USD in sales revenue HDD production exceeds 10M units |
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| 2001 | Apr Apr Apr Jul Sep Nov Dec Dec |
Contributes memory modules to Korean scientific satellite 'WooRiByul No.4' Announces industry's first monthly sales record of 100,000 DRAM Announces development of environmentally-friendly 'green' memory module Mass production of 512Mb NAND Flash memory Introduces industry's first 576Mb Rambus DRAM Achieves world's first TL9000 Certificate in semiconductor industry Establishes Shanghai China Sales Subsidiary (SSS) Announces development of SoC for digital audio applications |
| 2002 | Jan Feb Feb Mar Apr May Jun Sep Oct Oct Dec Dec |
Announces development of core chipsets for ADSL Mass production of industry's first DRAM on 300mm wafer Establishes SOC R&D Center Mass Production of smart card chips for credit card applications Announces development of high-performance CPU for next-generation PDAs Introduces industry's first 512Mb DDR2 Completion of Memory R&D Center in Hwasung Introduces industry's first 2Gb NAND Flash memory Introduces industry's first FRAM for mobile applications Achieves first BS7799 Information Security Certificate in semiconductor industry Achieves top market share in LCD driver ICs Achieves world #1 market share (60%) in Nand Flash |
| 2003 | Mar Jul Jul Jul Sep Dec Dec |
Mass production of 4-chip MCP (Multi-Chip Package) for mobile handsets Mass production of industry's first 1Gb DDR SDRAM Announces development of next-generation memory technology, phase-change RAM Announces development of industry's first 533MHz Mobile CPU Announces development of industry's first 4Gb NAND Flash memory Achieves top market share ranking in Flash memory Establishes R & D Center and 3rd assembly and test facility in Suzhou |
| 2004 | Feb Mar Mar Jun Sep Nov Dec Dec |
Establishes System LSI research facility in Hangzhou, China SAMSUNG Electronics Joins IBM, Chartered and Infineon in next-generation semiconductor logic process development Opening of first SAMSUNG Mobile Forum in Taiwan Establishes LSI R&D Center in Giheung Introduces industry's first 667MHz Mobile CPU Announces development of 1G OneNAND Declaration of New Semiconductor Vision & Culture Achieves world #1 market share (29%) in multichip packaging (MCP) |
| 2005 | Feb May May Jun Jun Sep Oct Oct |
Announces development of industry's first DDR3 SDRAM Flash memory-dedicated Fab 14 begins operation Mass production of industry's first 70nm 4Gb NAND Flash memory System LSI-dedicated fab S1 begins operation Announces development of 5 megapixel CMOS image sensor Announces development of industry's first 16Gb NAND Flash memory Announces development of industry's first 1026-Channel DDI for high-resolution LCD panels Announces development of industry's first 70nm DRAM |
| 2006 | Feb Mar Apr Apr May Jul Aug Sep Sep Oct Dec Dec |
Announces development of world's fastest graphics memory - 512Mb GDDR4 with 12GByte/sec processing speed Mass production of world's first 512Mb DDR2 on 80nm scale Announces development of wafer-level processed stack package (WSP) of high-density memory chips using 'through silicon via' (TSV) interconnection technology Announces decision to invest in new 300mm fabrication facility in Austin, Texas SAMSUNG releases world's first notebook PC embedded with 32GB NAND flash-based solid state disk (SSD) Announces mass production of 8Gb NAND flash with 60nm process technology and development of industry’s highest-density 8GB NAND flash memory device First to mass-produce 1Gb DDR2 memory with 80nm process technology Announces development of intelligent mobile DDI to enhance visibility of on-screen images outdoors Announces first 40nm 32Gb NAND flash with revolutionary charge trap technology Common Platform members SAMSUNG, IBM and Chartered successfully produce 90nm chips for Qualcomm Announces development of prototype OneDRAM™ fusion memory chip that significantly increases data processing speed between processors in mobile applications DRAM sales exceed 10B in 2006 |
| 2007 | Jan Feb Mar Mar Mar Mar Mar Mar Jun Jun |
SAMSUNG samples first 50nm 16Gb NAND flash for solid state drives Announces shipping of over 100 million OneNand™ flash memory units in 2006 Begins world's first DRAM mass production using 60nm-class technology Begins shipping samples of 8GB moviNAND™ memory chips to major mobile electronics manufacturers Introduces third fusion semiconductor - Flex OneNAND™ Introduces 1.8 inch 64GB flash-based solid state drive Announces development of package-on-package solution incorporating SAMSUNG's application processor and OneDRAM™ fusion memory Announces development of world's smallest 8.4 megapixel CMOS image sensor with 1.4um design SAMSUNG opens second wafer plant in Austin, Texas. The new 300mm NAND Flash memory fab will ramp up to produce 60,000 wafers per month by 2008. SAMSUNG mass produces industry's first 1.8inch, 64GB solid state drive, targeted for notebook PCs |
| 1990 | Mar Jul |
Establishes Fab 4 (Giheung) Announces development of 16Mb DRAM |
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| 1991 | Nov | Establishes Onyang Assembly Plant |
| 1992 | Aug Dec |
Announces development of industry's first 64Mb DRAM Achieves world #1 market share in DRAM |
| 1993 | Jun Dec |
Establishes industry’s first 8 inch fab (Fab 5) in Giheung Achieves world #1 market share in Memory |
| 1994 | Aug | Introduces industry's first 256Mb DRAM |
| 1996 | Mar Jul Nov |
Holds groundbreaking ceremony for SAMSUNG Austin Semiconductor (SAS) plant Establishes assembly and test facility in Suzhou, China (SESS) Introduces industry’s first 1Gb DRAM |
| 1997 | Jul Jul |
Establishes Fab 8 (Giheung) Holds equipment installation ceremony at SAMSUNG Semiconductor Austin (SAS) |
| 1998 | Mar Jun |
SAMSUNG Austin Semiconductor (SAS) fab officially begins operation (producing 64Mb synchronous DRAM) Announces shipment of world's first 128M Flash memory |
| 1999 | Jul Sep Oct |
Holds groundbreaking ceremony for nearby 925,000 sq. m. Hwasung semiconductor complex Awarded Guinness World Record Certificate for greatest number of accident-free man hours in an industrial site (211,600,000) Announces development of world’s first 1Gb Flash memory prototype |
| 1981 | Jan | Develops color signal ICs for color TVs |
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| 1982 | Jan Nov |
Establishes Korea's first semiconductor R&D center (Bucheon) SAMSUNG Founder Chairman Byung-chull Lee surveys Giheung site |
| 1983 | Feb Jul Dec |
February 8th Tokyo Declaration : Chairman Byung-chull Lee formally announces SAMSUNG's large-scale investment plans in semiconductor business Establishes SAMSUNG Semiconductor Inc. (San Jose) Announces development of 64Kb DRAM |
| 1984 | May Oct |
Official opening of Giheung semiconductor complex (Fab 1) Announces development of 256Kb DRAM |
| 1985 | Apr May |
Announces development of 64K SRAM Establishes Fab 2 (Giheung) |
| 1986 | Apr Jul Sep |
Mass production of 256K DRAM (3M wafers/month) Announces development of 1Mb DRAM Announces development of 256K SRAM |
| 1987 | Dec | Mr. Kun Hee Lee is appointed Chairman of SAMSUNG Group |
| 1988 | Nov | SAMSUNG Electronics merges with SAMSUNG Semiconductor & Telecommunications |
| 1974 | Dec | SAMSUNG acquires Hankook Semiconductor |
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| 1975 | Jan Dec |
Develops ICs for TV and audio applications Mass production of ICs for LED Wrist Watches |
| 1976 | Mar Jun Jul Dec |
Mass production of ICs for microwave ovens Mass production of LCD screen ICs for electronic watches Mass production of ICs for electronic analog watches Bucheon Fab upgrade (3-inch wafer base, 300 wafers/day to 900 wafers/day) |
| 1977 | Jan Jun |
Establishes transistor development team Mass production of bipolar transistors |
| 1978 | Jun | SAMSUNG acquires Fairchild Daebang plant |
| 1979 | Mar Oct |
Achieves 1B KRW in monthly sales Relocates Daebang Assembly Plant to Bucheon |
